| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±10 | |
| 17 | |
| 180@5V | |
| 66(Max)@5V | |
| 1800@25V | |
| 3100 | |
| 52 | |
| 83 | |
| 44 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) mm |
| Verpackungsbreite | 9.65(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
Create an effective common drain amplifier using this IRL640STRRPBF power MOSFET from Vishay. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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