| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±10 | |
| 1 | |
| 540@5V | |
| 6.1(Max)@5V | |
| 250@25V | |
| 1300 | |
| 17 | |
| 47 | |
| 16 | |
| 9.3 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.37(Max) |
| Verpackungsbreite | 6.29(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | HVMDIP |
| 4 | |
| Leitungsform | Through Hole |
Create an effective common drain amplifier using this IRLD110PBF power MOSFET from Vishay. Its maximum power dissipation is 1300 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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