| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±10 | |
| 2 | |
| 17 | |
| 100@5V | |
| 18(Max)@5V | |
| 12(Max) | |
| 4.5(Max) | |
| 490 | |
| 870@25V | |
| 360 | |
| 3700 | |
| 41 | |
| 110 | |
| 23 | |
| 11 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.01(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.41(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the IRLZ24LPBF power MOSFET. Its maximum power dissipation is 3700 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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