| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±10 | |
| 30 | |
| 50@5V | |
| 35(Max)@5V | |
| 1600@25V | |
| 88000 | |
| 56 | |
| 170 | |
| 30 | |
| 14 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.01(Max) mm |
| Verpackungsbreite | 4.7(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Use Vishay's IRLZ34PBF power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 88000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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