| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Inverting|Non-Inverting | |
| 1 | |
| IGBT|MOSFET | |
| 1 | |
| 20(Typ) | |
| 20(Typ) | |
| 76(Typ) | |
| CMOS | |
| 3|15 | |
| 5.5|30 | |
| 5(Typ) | |
| 1255 | |
| -40 | |
| 125 | |
| Under Voltage Lockout | |
| Yes | |
| Tube | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.35(Max) |
| Verpackungsbreite | 7.5 |
| Verpackungslänge | 10.3 |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 16 | |
| Leitungsform | Gull-wing |
Ideal for a make and break circuit this ISO5851DW power driver manufactured by Texas Instruments will allow you to implement a transistor rather than a relay! This device has a maximum propagation delay time of 76(typ) ns and a maximum power dissipation of 700 mW. Its maximum power dissipation is 700 mW. This device has a minimum operating supply voltage of 3 V and a maximum of 5.5 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.
| EDA / CAD Models |
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