| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| BiMOSFET | |
| N | |
| Single | |
| ±20 | |
| 1700 | |
| 2.6 | |
| 200 | |
| 0.1 | |
| 1040 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.16(Max) |
| Verpackungsbreite | 5.13(Max) |
| Verpackungslänge | 19.96(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-264 |
| 3 | |
| Leitungsform | Through Hole |
This powerful and secure IXBK75N170 IGBT transistor from Ixys Corporation will make sure your circuit works properly. Its maximum power dissipation is 1040000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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