| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 2500 | |
| 3.15 | |
| 5 | |
| 0.1 | |
| 32 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 5.1(Max) |
| Verpackungsbreite | 14(Max) |
| Verpackungslänge | 16.05(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-268 |
| 3 |
Don't be afraid to step up the amps in your device when using this IXBT2N250 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 32000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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