IXYSIXBT2N250IGBT-Chip

Trans IGBT Chip N-CH 2500V 5A 32W 3-Pin(2+Tab) TO-268

Don't be afraid to step up the amps in your device when using this IXBT2N250 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 32000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.

Playbook: Smarte Drohnen-Systeme

Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.