| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1200 | |
| ±20 | |
| 3 | |
| 4500@10V | |
| 39@10V | |
| 39 | |
| 1050@25V | |
| 200000 | |
| 18 | |
| 15 | |
| 32 | |
| 17 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) |
| Verpackungsbreite | 9.4(Max) |
| Verpackungslänge | 10.41(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this IXFA3N120 power MOSFET from Ixys Corporation. Its maximum power dissipation is 200000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
| EDA / CAD Models |
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