| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±30 | |
| 7 | |
| 1900@10V | |
| 47@10V | |
| 47 | |
| 2590@25V | |
| 300000 | |
| 44 | |
| 49 | |
| 42 | |
| 25 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) |
| Verpackungsbreite | 9.4(Max) |
| Verpackungslänge | 10.41(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this IXFA7N100P power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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