| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±30 | |
| 44 | |
| 220@10V | |
| 305@10V | |
| 305 | |
| 16900@25V | |
| 1250000 | |
| 56 | |
| 68 | |
| 90 | |
| 60 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.59(Max) |
| Verpackungsbreite | 5.31(Max) |
| Verpackungslänge | 20.29(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Lieferantenverpackung | PLUS 264 |
| 3 |
Compared to traditional transistors, IXFB44N100P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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