| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 60 | |
| 140@10V | |
| 250@10V | |
| 250 | |
| 18000@25V | |
| 1250000 | |
| 26 | |
| 29 | |
| 110 | |
| 36 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.59(Max) |
| Verpackungsbreite | 5.31(Max) |
| Verpackungslänge | 20.29(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Lieferantenverpackung | PLUS 264 |
| 3 |
This IXFB60N80P power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 1250000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
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