| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 120 | |
| 22@10V | |
| 152@10V | |
| 152 | |
| 6000@25V | |
| 714000 | |
| 31 | |
| 35 | |
| 100 | |
| 30 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.45(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.24(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 | |
| Leitungsform | Through Hole |
Make an effective common source amplifier using this IXFH120N20P power MOSFET from Ixys Corporation. Its maximum power dissipation is 714000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with hiperfet technology.
| EDA / CAD Models |
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