| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 150 | |
| 12 | |
| 1050@10V | |
| 122@10V | |
| 122 | |
| 4000@25V | |
| 300000 | |
| 32 | |
| 33 | |
| 62 | |
| 21 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.26(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXFH12N100 power MOSFET. Its maximum power dissipation is 300000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hdmos technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.