| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±30 | |
| 15 | |
| 760@10V | |
| 97@10V | |
| 97 | |
| 5140@25V | |
| 543000 | |
| 58 | |
| 44 | |
| 44 | |
| 41 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.26(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 |
As an alternative to traditional transistors, the IXFH15N100P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 543000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.