| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 170 | |
| 9@10V | |
| 198@10V | |
| 198 | |
| 6000@25V | |
| 715000 | |
| 33 | |
| 50 | |
| 90 | |
| 35 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.45(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.24(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 | |
| Leitungsform | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation's IXFH170N10P power MOSFET can provide a solution. Its maximum power dissipation is 714000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with hiperfet technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
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