| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 20 | |
| 520@10V | |
| 86@10V | |
| 86 | |
| 4685@25V | |
| 500000 | |
| 24 | |
| 24 | |
| 85 | |
| 30 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.45(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.24(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 | |
| Leitungsform | Through Hole |
This IXFH20N80P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 500000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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