| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 26 | |
| 270@10V | |
| 72@10V | |
| 72 | |
| 4150@25V | |
| 460000 | |
| 21 | |
| 27 | |
| 75 | |
| 25 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.45(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.24(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 | |
| Leitungsform | Through Hole |
As an alternative to traditional transistors, the IXFH26N60P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 460000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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