| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 44 | |
| 140@10V | |
| 98@10V | |
| 98 | |
| 5440@25V | |
| 658000 | |
| 27 | |
| 29 | |
| 85 | |
| 28 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.45(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.24(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 | |
| Leitungsform | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFH44N50P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 650000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
| EDA / CAD Models |
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