| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 96 | |
| 24@10V | |
| 145@10V | |
| 145 | |
| 4800@25V | |
| 600000 | |
| 30 | |
| 30 | |
| 75 | |
| 28 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 |
This IXFH96N20P power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 600000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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