| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 170 | |
| 9@10V | |
| 198@10V | |
| 198 | |
| 6000@25V | |
| 715000 | |
| 33 | |
| 50 | |
| 90 | |
| 35 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.16(Max) |
| Verpackungsbreite | 5.13(Max) |
| Verpackungslänge | 19.96(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-264AA |
| 3 |
As an alternative to traditional transistors, the IXFK170N10P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 714000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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