| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 78 | |
| 68@10V | |
| 147@10V | |
| 147 | |
| 9900@25V | |
| 1130000 | |
| 7 | |
| 10 | |
| 60 | |
| 30 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.16(Max) |
| Verpackungsbreite | 5.13(Max) |
| Verpackungslänge | 19.96(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-264AA |
| 3 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFK78N50P3 power MOSFET. Its maximum power dissipation is 1130000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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