| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Source | |
| HiperFET | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 106 | |
| 20@10V | |
| 380@10V | |
| 380 | |
| 9000@25V | |
| 520000 | |
| 30 | |
| 80 | |
| 75 | |
| 30 | |
| -55 | |
| 150 | |
| Befestigung | Screw |
| Verpackungsbreite | 25.42(Max) mm |
| Verpackungslänge | 38.23(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 |
This IXFN106N20 power MOSFET from Ixys Corporation can be used for amplification in your circuit. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
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