| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 150 | |
| 180 | |
| 8@10V | |
| 360@10V | |
| 360 | |
| 9100@25V | |
| 600000 | |
| 65 | |
| 90 | |
| 140 | |
| 50 | |
| -55 | |
| 150 | |
| Befestigung | Screw |
| Verpackungsbreite | 25.42(Max) mm |
| Verpackungslänge | 38.23(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFN180N10 power MOSFET. Its maximum power dissipation is 600000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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