| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 150 | |
| 11@10V | |
| 240@10V | |
| 240 | |
| 7000@25V | |
| 680000 | |
| 36 | |
| 32 | |
| 150 | |
| 30 | |
| -55 | |
| 175 | |
| Befestigung | Screw |
| Verpackungshöhe | 9.6(Max) |
| Verpackungsbreite | 25.42(Max) |
| Verpackungslänge | 38.23(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 | |
| Leitungsform | Screw |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXFN180N15P power MOSFET. Its maximum power dissipation is 680000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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