| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 70 | |
| ±20 | |
| 180 | |
| 6@10V | |
| 480@10V | |
| 480 | |
| 9000@25V | |
| 520000 | |
| 60 | |
| 60 | |
| 100 | |
| 30 | |
| -55 | |
| 150 | |
| Befestigung | Screw |
| Verpackungshöhe | 9.6(Max) mm |
| Verpackungsbreite | 25.42(Max) mm |
| Verpackungslänge | 38.23(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 |
Make an effective common gate amplifier using this IXFN200N07 power MOSFET from Ixys Corporation. Its maximum power dissipation is 520000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
| EDA / CAD Models |
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