| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 188 | |
| 10.5@10V | |
| 255@10V | |
| 255 | |
| 18600@25V | |
| 1070000 | |
| 18 | |
| 30 | |
| 70 | |
| 43 | |
| -55 | |
| 175 | |
| Befestigung | Screw |
| Verpackungshöhe | 9.6(Max) |
| Verpackungsbreite | 25.42(Max) |
| Verpackungslänge | 38.23(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 | |
| Leitungsform | Screw |
Looking for a component that can both amplify and switch between signals within your circuit? The IXFN210N20P power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 1070000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes hiperfet technology.
| EDA / CAD Models |
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