| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 36 | |
| 240@10V | |
| 380@10V | |
| 380 | |
| 9200@25V | |
| 700000 | |
| 30 | |
| 55 | |
| 110 | |
| 41 | |
| -55 | |
| 150 | |
| Befestigung | Screw |
| Verpackungshöhe | 9.6(Max) |
| Verpackungsbreite | 25.42(Max) |
| Verpackungslänge | 38.23(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 | |
| Leitungsform | Screw |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFN36N100 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 700000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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