| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 420 | |
| 2.3@10V | |
| 670@10V | |
| 670 | |
| 47000@25V | |
| 1070000 | |
| 255 | |
| 155 | |
| 115 | |
| 47 | |
| -55 | |
| 175 | |
| Befestigung | Screw |
| Verpackungshöhe | 9.6(Max) |
| Verpackungsbreite | 25.42(Max) |
| Verpackungslänge | 38.23(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 | |
| Leitungsform | Screw |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFN420N10T power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 1070000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.
| EDA / CAD Models |
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