| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±30 | |
| 5 | |
| 2800@10V | |
| 33.4@10V | |
| 33.4 | |
| 1830@25V | |
| 250000 | |
| 37 | |
| 13 | |
| 30 | |
| 12 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.66(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 |
If you need to either amplify or switch between signals in your design, then Ixys Corporation's IXFP5N100P power MOSFET is for you. Its maximum power dissipation is 250000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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