| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| EA | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±30 | |
| 9.5 | |
| 1100@10V | |
| 83@10V | |
| 83 | |
| 2800@25V | |
| 200000 | |
| 12 | |
| 10 | |
| 28 | |
| 12 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) mm |
| Verpackungsbreite | 5.21(Max) mm |
| Verpackungslänge | 16.13(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | ISOPLUS 247 |
| 3 |
As an alternative to traditional transistors, the IXFR14N100Q2 power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 200000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
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