| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 50 | |
| 72@10V | |
| 200@10V | |
| 200 | |
| 10000@25V | |
| 570000 | |
| 15 | |
| 20 | |
| 43 | |
| 30 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) |
| Verpackungsbreite | 5.21(Max) |
| Verpackungslänge | 16.13(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | ISOPLUS 247 |
| 3 |
Use Ixys Corporation's IXFR80N50Q3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 570000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
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