| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 900 | |
| ±30 | |
| 24 | |
| 420@10V | |
| 130@10V | |
| 130 | |
| 7200@25V | |
| 660000 | |
| 38 | |
| 40 | |
| 68 | |
| 46 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 5.1(Max) |
| Verpackungsbreite | 14(Max) |
| Verpackungslänge | 16.05(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-268 |
| 3 |
This IXFT24N90P power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes polar hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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