| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.5 | |
| 75 | |
| 0.1 | |
| 250 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 |
This IXGH36N60B3C1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |
KI-Systeme in der Medizin
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