| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 75 | |
| 36@10V | |
| 500@10V | |
| 500 | |
| 10 | |
| 30 | |
| 110 | |
| 20 | |
| -55 | |
| 150 | |
| Befestigung | Screw |
| Verpackungsbreite | 25.42(Max) |
| Verpackungslänge | 38.23(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-227B |
| 4 |
Make an effective common gate amplifier using this IXKN75N60C power MOSFET from Ixys Corporation. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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