| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 2500 | |
| 3.2 | |
| 32 | |
| 0.5 | |
| 250 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.88 mm |
| Verpackungsbreite | 5.03 mm |
| Verpackungslänge | 19.91 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | ISOPLUS I4-PAC |
| 3 |
The IXLF19N250A IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 2500 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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