LittelfuseIXSH80N120L2KHVMOSFETs
Trans MOSFET P-CH SiC 1.2KV 79A 4-Pin(4+Tab) TO-247
Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies, solar inverters, high voltage DC/DC Converters, EV charging infrastructure, motor drives and induction heating.
Features
- • 1200 V with low RDS(on) = 30 mΩ / 80
- • SiC MOSFET technology with -3/+15...+18 V gate drive
- • Low input capacitance of Ciss = 3000 pF
- • Maximum virtual junction temperature of Tvj = 175 ⁰C
- • Ultra-fast intrinsic body diode with trr = 54.8 ns / 25.6
- • Kelvin source connection
Benefits
- • Low conduction losses
- • Low gate drive power requirements
- • Low thermal management effort
- • Suitable for hard-switching
- • Optimized gate control
Applications
- • Solar inverters
- • UPS
- • High voltage DC/DC converters
- • Switch mode power Supplies
- • EV charging infrastructures
- • Motor drives
- • Induction heating
- • Industrial power Supply
| Compliant with Exemption | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Power MOSFET | |
| SiC | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 1200 | |
| 20 | |
| -55 to 175 | |
| 79 | |
| 47@15V | |
| 135@18V | |
| 3000@800V | |
| 395000 | |
| 14 | |
| 24.4 | |
| 28.8 | |
| 12.8 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 23.6(Max) |
| Verpackungsbreite | 5.21(Max) |
| Verpackungslänge | 16.13(Max) |
| Leiterplatte geändert | 4 |
| Tab | Tab |
| Lieferantenverpackung | TO-247 |
| 4 |
| EDA / CAD Models |
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