| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 65 | |
| ±15 | |
| 120 | |
| 10@10V | |
| 185@10V | |
| 185 | |
| 13200@25V | |
| 298000 | |
| 21 | |
| 28 | |
| 38 | |
| 31 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) mm |
| Verpackungsbreite | 9.4(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this IXTA120P065T power MOSFET from Ixys Corporation. Its maximum power dissipation is 298000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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