| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 180 | |
| 6.4@10V | |
| 151@10V | |
| 151 | |
| 6900@25V | |
| 480000 | |
| 31 | |
| 54 | |
| 42 | |
| 33 | |
| -55 | |
| 175 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.7(Max) mm |
| Verpackungsbreite | 9.4(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
This IXTA180N10T power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 480000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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