| Compliant | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±20 | |
| 4.5 | |
| 36 | |
| 100 | |
| 10 | |
| 110@10V | |
| 55@10V | |
| 55 | |
| 3100@25V | |
| 300000 | |
| 15 | |
| 31 | |
| 36 | |
| 21 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) mm |
| Verpackungsbreite | 9.4(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this IXTA36P15P power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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