| Compliant with Exemption | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 62 | |
| 100@20V | |
| 550@20V | |
| 11500@25V | |
| 800000 | |
| 75 | |
| 85 | |
| 110 | |
| 36 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.59(Max) |
| Verpackungsbreite | 5.31(Max) |
| Verpackungslänge | 20.29(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Lieferantenverpackung | PLUS 264 |
| 3 |
Make an effective common source amplifier using this IXTB62N50L power MOSFET from Ixys Corporation. Its maximum power dissipation is 800000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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