| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| 200 | |
| 5.5@10V | |
| 152@10V | |
| 152 | |
| 9400@25V | |
| 550000 | |
| 34 | |
| 31 | |
| 45 | |
| 35 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXTH200N10T power MOSFET. Its maximum power dissipation is 550000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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