| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| 48 | |
| 100 | |
| 25 | |
| 85@10V | |
| 103@10V | |
| 103 | |
| 5400@25V | |
| 462000 | |
| 27 | |
| 46 | |
| 67 | |
| 30 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AD |
| 3 |
Make an effective common source amplifier using this IXTH48P20P power MOSFET from Ixys Corporation. Its maximum power dissipation is 462000 mW. This P channel MOSFET transistor operates in enhancement mode. This device is made with polarp technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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