| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±15 | |
| 76 | |
| 25@10V | |
| 197@10V | |
| 197 | |
| 13700@25V | |
| 298000 | |
| 20 | |
| 40 | |
| 52 | |
| 25 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.26(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 |
Use Ixys Corporation's IXTH76P10T power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 298000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with trenchp technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
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