| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 85 | |
| ±15 | |
| 96 | |
| 13@10V | |
| 180@10V | |
| 180 | |
| 13100@25V | |
| 298000 | |
| 22 | |
| 34 | |
| 45 | |
| 23 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.46(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 |
Make an effective common source amplifier using this IXTH96P085T power MOSFET from Ixys Corporation. Its maximum power dissipation is 298000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with trenchp technology.
| EDA / CAD Models |
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