| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 180 | |
| 11@10V | |
| 240@10V | |
| 240 | |
| 7000@25V | |
| 800000 | |
| 36 | |
| 32 | |
| 150 | |
| 30 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.16(Max) |
| Verpackungsbreite | 5.13(Max) |
| Verpackungslänge | 19.96(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-264AA |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IXTK180N15P power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 800000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with polarht technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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