| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 250 | |
| 20 | |
| 90 | |
| 36@10V | |
| 640@10V | |
| 640 | |
| 23000@25V | |
| 960000 | |
| 160 | |
| 175 | |
| 40 | |
| 50 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.59(Max) |
| Verpackungsbreite | 5.31(Max) |
| Verpackungslänge | 20.29(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-264 |
| 3 |
Amplify electronic signals and switch between them with the help of Ixys Corporation's IXTK90N25L2 power MOSFET. Its maximum power dissipation is 960000 mW. This device is made with linear l2 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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