| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 80000@0V | |
| 5.8@5V | |
| 100@25V | |
| 1100 | |
| 64 | |
| 10 | |
| 34 | |
| 7 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.4(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.3(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Make an effective common source amplifier using this IXTP01N100D power MOSFET from Ixys Corporation. Its maximum power dissipation is 1100 mW. This N channel MOSFET transistor operates in depletion mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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