| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 0.8(Min) | |
| 4600@0V | |
| 12.7@5V | |
| 312@25V | |
| 60000 | |
| 52 | |
| 54 | |
| 35 | |
| 28 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.66(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 |
Use Ixys Corporation's IXTP08N50D2 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 60000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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