| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 500 | |
| ±20 | |
| 4.5 | |
| -55 to 150 | |
| 10 | |
| 100 | |
| 10 | |
| 1000@10V | |
| 50@10V | |
| 50 | |
| 18 | |
| 17 | |
| 5900 | |
| 2840@25V | |
| 42@25V | |
| 2 | |
| 275 | |
| 300000 | |
| 44 | |
| 28 | |
| 52 | |
| 20 | |
| -55 | |
| 150 | |
| 30 | |
| 4.7 | |
| 414 | |
| 3 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.66(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation's IXTP10P50P power MOSFET can provide a solution. Its maximum power dissipation is 300000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.