| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±15 | |
| 4 | |
| 32 | |
| 100 | |
| 25 | |
| 130@10V | |
| 185@10V | |
| 185 | |
| 14500@25V | |
| 300000 | |
| 12 | |
| 15 | |
| 57 | |
| 32 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.66(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXTP32P20T power MOSFET. Its maximum power dissipation is 300000 mW. This P channel MOSFET transistor operates in enhancement mode. This device is made with trenchp technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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